Nanoscale Transistors
Lectures contain:
Introductory Lecture (Fall 06); Lecture 1: MOSFET Review; Lecture 2: Introduction to Device Simulation; Lecture 3: 1D MOS Electrostatics; Lecture 4: MOS Capacitors; Lecture 5: Poly Si Gate MOS Capacitors; Lecture 6: Quantum Mechanical Effects; Lecture 7: MOSFET IV, Part I; Lecture 8: MOSFET IV, Part II; Lecture 9: MOSFET IV, Part III; Lecture 10: The Ballistic MOSFET; Lecture 11: The Quasi-ballistic MOSFET; Lecture 12: Subthreshold Conduction; Lecture 13: Threshold Voltage and MOSFET Capacitances; Lecture 14: Effective Mobility; Lecture 15: 2D Electrostatics, Part I; Lecture 16: 2D Electrostatics, Part II; The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective; Lecture 17: Device Scaling; Lecture 18: VT Engineering; Lecture 19: Series Resistance; Lecture 20: MOSFET Leakage; Lecture 21: Gate resistance and Interconnects; Lecture 22: CMOS Process Steps; Lecture 23: CMOS Process Flow; Lecture 24: CMOS Circuits, Part I; Lecture 25: CMOS Circuits, Part I I; Lecture 26: CMOS Limits; Lecture 27: RF CMOS; Lecture 28: Overview of SOI Technology; Lecture 29: SOI Electrostatics; Lecture 30: UTB SOI Electrostatics; Lecture 31: Heterostructure Fundamentals; Lecture 32: Heterojunction Diodes; Lecture 33: Heterojunction Bipolar Transistors; Lecture 34: Heterostructure FETs.
Abstract:
This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and circuit and system considerations are the subject of Part 2. In Part 3, we examine new transistor materials and device structures. The use of computer simulation to examine device issues is an integral part of the course.